AOT290L/aob290l 100v n-channel mosfet v ds i d (at v gs =10v) 140a r ds(on) (at v gs =10v) < 3.5m w (< 3.2m w * ) symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.25 60 0.3 w power dissipation a p dsm w t a =70c 500 1.3 t a =25c 110 t c =25c t c =100c power dissipation b p d continuous drain current 500 18 avalanche energy l=0.1mh c a t a =25c i dsm a t a =70c 500 pulsed drain current c continuous drain current g i d 140 the AOT290L/aob290l uses trench mosfet technology that is uniquely optimized to provide th e most efficient high frequency switching performance. pow er losses are minimized due to an extremely low combin ation of r ds(on) and c rss .in addition, switching behavior is well controlled with a soft recovery body diode.this dev ice is ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and le d backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v mj avalanche current c 15 a 100 v 20 gate-source voltage drain-source voltage 100 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 12 50 15 parameter typ max t c =25c 2.1 250 t c =100c junction and storage temperature range -55 to 175 g d s to220 g s d d to-263 2 pak d g s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.9 3.5 4.1 v i d(on) 500 a 2.7 3.5 t j =125c 4.4 5.7 v gs =10v, i d =20a to263 g fs 50 s v sd 0.67 1 v i s 140 a c iss 7180 9550 pf c oss 2780 3700 pf c rss 42 72 pf r g 1.7 w q g (10v) 90 126 nc q gs 33 nc q gd 21 nc t d(on) 31 69 ns t r 24 53 ns t d(off) 45 99 ns t f 27 60 ns t rr 65 91 ns q rr 460 644 nc r ds(on) static drain-source on-resistance body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v switching parameters i dss m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage v gs =10v, i d =20a maximum body-diode continuous current g to220 i s =1a,v gs =0v v ds =5v, i d =20a 3.2 2.5 m w body diode reverse recovery charge i f =20a, di/dt=500a/ m s input capacitance output capacitance turn-on delaytime gate drain charge reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =50v, f=1mhz dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =50v, i d =20a gate source charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175c may be used if the p cb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. the maximum current limited by package is 120a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. www.freescale.net.cn 2/6 AOT290L/aob290l 100v n-channel mosfet
typical electrical and thermal characteristics 40 0 20 40 60 80 100 3 4 5 6 7 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =20a 0 2 4 6 8 10 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 6.5v 5.5v 8v 10v vgs=5v 6v www.freescale.net.cn 3/6 AOT290L/aob290l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 20 40 60 80 100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 0 20 40 60 80 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 1000 2000 3000 4000 5000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =50v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m s r q jc =0.3c/w www.freescale.net.cn 4/6 AOT290L/aob290l 100v n-channel mosfet
typical electrical and thermal characteristics 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 100 200 300 400 500 600 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 30 60 90 120 150 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =60c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 AOT290L/aob290l 100v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AOT290L/aob290l 100v n-channel mosfet
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